Detalles Bibliográficos
| Autor Principal: |
Srivastava, Viranjay M. |
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| Otros autores o Colaboradores: |
Singh, Ghanshyam |
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| Formato: | Libro
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| Lengua: | inglés |
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| Datos de publicación: |
Cham :
Springer International Publishing : Imprint: Springer,
2014.
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| Series: | Analog Circuits and Signal Processing,
122
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| Temas: | |
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| Acceso en línea: | http://dx.doi.org/10.1007/978-3-319-01165-3
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| Resumen: | This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·        Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·        Explains the design of RF switches using the technologies presented and simulates switches; ·        Verifies parameters and discusses feasibility of devices and switches.
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| Descripción Física: | xv, 199 p. : il. |
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| ISBN: | 9783319011653 |
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| ISSN: | 1872-082X ; |
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| DOI: | 10.1007/978-3-319-01165-3 |
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