Electrical Design of Through Silicon Via

Detalles Bibliográficos
Otros autores o Colaboradores: Lee, Manho (ed.), Pak, Jun So (ed.), Kim, Joungho (ed.)
Formato: Libro
Lengua:inglés
Datos de publicación: Dordrecht : Springer Netherlands : Imprint: Springer, 2014.
Temas:
Acceso en línea:http://dx.doi.org/10.1007/978-94-017-9038-3
Resumen:Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity, and even thermal integrity. Most of the analysis in this book include simulations, numerical modelings and measurements for verification. The author and co-authors in each chapter have been studied deep into a TSV for many years and the accumulated technical know-hows and tips for related subjects are comprehensively covered.
Descripción Física:ix, 280 p. :
ISBN:9789401790383
DOI:10.1007/978-94-017-9038-3

MARC

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505 0 |a Preface -- 1 Introduction -- 2 Electrical Modeling of a Through-Silicon Via (TSV) -- 3 High-speed TSV-based Channel Modeling and Design -- 4 Noise Coupling and Shielding in 3D ICs -- 5 Thermal Effects on TSV Signal Integrity -- 6 Power Distribution Network (PDN) Modeling and Analysis for TSV and Interposer-based 3D-ICs in the Frequency Domain -- 7 TSV Decoupling Schemes -- Index. 
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